Methods of forming pattern structures

专利名称：Methods of forming pattern structures发明人：Jun-Ho Jeong,Jang-Eun Lee,Woo-Jin

Kim,Hee-Ju Shin,Yong-Hwan Ryu

申请号：US13184127申请日：20110715公开号：US08334148B2公开日：20121218

专利附图：

摘要：An example embodiment relates to a method of forming a pattern structure,including forming an object layer on a substrate, and forming a hard mask on the objectlayer. A plasma reactive etching process is performed on the object layer using anetching gas including a fluorine containing gas and ammonia (NH) gas together withoxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of thehard mask during the etching process.

申请人：Jun-Ho Jeong,Jang-Eun Lee,Woo-Jin Kim,Hee-Ju Shin,Yong-Hwan Ryu

地址：Suwon-si KR,Suwon-si KR,Yongin-si KR,Yongin-si KR,Yongin-si KR

国籍：KR,KR,KR,KR,KR

代理机构：Harness, Dickey & Pierce P.L.C.

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