FABRICATION OF THIN-FILM ELECTRONIC DEVICES WITH N

专利名称：FABRICATION OF THIN-FILM ELECTRONIC

DEVICES WITH NON-DESTRUCTIVE WAFERREUSE

发明人：Stephen R. FORREST,Kyusang LEE申请号：US15101287申请日：20141202

公开号：US20160307924A1公开日：20161020

专利附图：

摘要：Thin-film electronic devices such as LED devices and field effect transistordevices are fabricated using a non-destructive epitaxial lift-off technique that allows

indefinite reuse of a growth substrate. The method includes providing an epitaxialprotective layer on the growth substrate and a sacrificial release layer between theprotective layer and an active device layer. After the device layer is released from thegrowth substrate, the protective layer is selectively etched to provide a newly exposedsurface suitable for epitaxial growth of another device layer. The entire thickness of thegrowth substrate is preserved, enabling continued reuse. Inorganic thin-film device layerscan be transferred to a flexible secondary substrate, enabling formation of curvedinorganic optoelectronic devices.

申请人：THE REGENTS OF THE UNIVERSITY OF MICHIGAN

地址：Ann Arbor MI US

国籍：US

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