专利名称：FUSE AND METHOD FOR FORMING发明人：LI, Chi Nan Brian,HOEFLER, Alexander, B.,LIN,
Der-Gao
申请号：EP04750600.1申请日：20040423公开号：EP1620886A2公开日：20060201
摘要：An active fuse includes an active fuse geometry (120) that is used to form both avariable resistor (106) and a select transistor (110). In one embodiment, the active fusegeometry is formed in a portion of an active region (160) of a semiconductor substrate(140), and a select gate (124) is disposed over an end portion (123) of the active fusegeometry to form an integral select transistor (110) for use in programming the activefuse. The use of a shared active fuse geometry within the active region allows for reducedarea requirements and improved sensing margins.
申请人：Freescale Semiconductor, Inc.
地址：6501 William Cannon Drive West Austin, Texas 78735 US
国籍：US
代理机构：Wray, Antony John
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