IMAGE SENSOR PIXEL AND FABRICATION METHOD THEREOF

专利名称：IMAGE SENSOR PIXEL AND FABRICATION

METHOD THEREOF

发明人：Cheol Soo Park申请号：US11993311申请日：20060614

公开号：US20090014761A1公开日：20090115

专利附图：

摘要：Provided is an image sensor pixel in which a specific or entire area of a fieldoxide layer inside the pixel can be used as a photodiode so as to increase a fill factor, anda fabrication method thereof. The image sensor pixel includes: a photodiode which is

buried inside a semiconductor substrate; and pixel transistors which are formed after thephotodiode is formed. In addition, the image sensor pixel includes: pixel transistors; afield oxide layer which separates the pixel transistors; and a photodiode which is locatedat the lower portion in a specific or entire area of the field oxide layer. In addition, thefabrication method includes: (a) forming a trench region in a specific area of a

semiconductor substrate; (b) forming a photodiode which includes at least a portion ofthe trench region; and (c) forming pixel transistor, after the photodiode is formed.Accordingly, a surface area of a photodiode increases, thereby improving a fill factor andphotosensitivity. In addition, in a unit pixel of an image sensor, the entire pixel areabecomes a photodiode region except for a region where transistors are formed, therebymaximizing the fill factor.

申请人：Cheol Soo Park

地址：Jeju-do KR

国籍：KR

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