GWM 160-0055P3Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
Preliminary data
L +G3G1S1S3G5S5L1L2L3
G2S2L -G4S4G6S6VDSS=55 V
=160 AID25
RDSon typ.=2.3 mΩ
MOSFETsSymbolVDSSVGSID25ID90IF25IF90
TC = 25°CTC = 90°CTC = 25°C (diode)TC = 90°C (diode)ConditionsTVJ = 25°C to 150°C
Maximum Ratings
55±2016012013590
VVAAAA
Applications
AC drives
•in automobiles
-electric power steering-starter generator•in industrial vehicles-propulsion drives-fork lift drives
•in battery supplied equipmentFeatures
•MOSFETs in trench technology:-low RDSon
-optimized intrinsic reverse diode•package:
-high level of integration-high current capability
-auxiliary terminals for MOSFET control-terminals for soldering or weldingconnections
-isolated DCB ceramic base platewith optimized heat transfer
SymbolConditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min.typ.max.TVJ = 25°CTVJ = 125°C20.10.2861825255070400.91001.71.42.33.82.9mΩmΩ41VµAmAµAnCnCnCnsnsnsnsVns0.85K/WK/WRDSonVGSthIDSSIGSSQgQgsQgdtd(on)trtd(off)tfVFtrrRthJCRthJHon chip level atVGS = 10 VVDS = 20 V; ID = 1 mAVDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°CVGS = ±20 V; VDS = 0 VVGS= 10 V; VDS = 44 V; ID = 25 AVGS= 10 V; VDS = 30 V;ID = 25 A; RG = 10 Ω(diode) IF = 80 A; VGS= 0 V(diode) IF = 20 A; -di/dt = 100 A/µs; VDS = 30 Vwith heat transfer pasteIXYS reserves the right to change limits, test conditions and dimensions.© 2004 IXYS All rights reserved
1 - 3
447GWM 160-0055P3 ComponentSymbolIRMSTVJTstgVISOLFC
Symbol
IISOL ≤ 1 mA; 50/60 Hz; t = 1 minMounting force with clipConditionsConditions
per pin in main current paths (P+, N-, L1, L2, L3)may be additionally limited by external connections
Equivalent Circuits for Simulation
Maximum Ratings
300-40...+175-55...+125
100050 - 250
A°C°CV~N
junction - case (typ.)
Cth1 = 0.039 J/K; Rth1 = 0.28 K/WCth2 = 0.069 J/K; Rth2 = 0.57 K/WThermal Response
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.typ.max.
0.6
mΩpFg
Rpin to chipCPWeight
coupling capacity between shorted
pins and mounting tab in the casetyp.
16025
Dimensions in mm (1 mm = 0.0394\")
IXYS reserves the right to change limits, test conditions and dimensions.© 2004 IXYS All rights reserved
2 - 3
447元器件交易网www.cecb2b.com
GWM 160-0055P31.2V0.9VDS0.6VGS = 8 V 10 V 12 V1.5RDSonRDSon(25°C)1.02.00.3TVJ = 25°C0.50.00100200ID300A0.0-50050100TVJ150CFig. 1: typ. output characteristics[VDS = ID (RDSon + 2x Rpin to chip)]300A250ID2006150410050001234567VGSV8TVJ = 125°CTVJ = 25°C02VGS10V8Fig. 2: typ. dependence of RDSon on temperatureID = 25 AVDS = 14 VVDS = 44 V0204060QG80100nCFig. 3: typ.transfer characteristics
400AVGS = 0 V350300-ID25020015010050Fig. 4: typ. gate charge characteristics
1
K/W
0.1
ZthJC
0.01
TVJ = 125°C0.001
TVJ = 25°C000.20.40.60.81.01.21.40.0VVSD0.0001
0.000010.00010.0010.010.11
s
10
IXYS reserves the right to change limits, test conditions and dimensions.© 2004 IXYS All rights reserved
3 - 3
447Fig. 5:typ. conduction characteristics
of body diode
Fig. 6: typ. transient thermal impedance
t
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