专利名称：Fabrication of an integrated injection logic
device with narrow basewidth
发明人：Alfred C. Ipri申请号：US06/080101申请日：19790928公开号：US04244001A公开日：19810106
摘要：The basewidth of a lateral, bipolar transistor is markedly reduced by firstforming a layer of polycrystalline silicon over an oxide coated substrate. By utilizing aprocess for doping the exposed edges of the patterned polysilicon layer, a narrowerbasewidth dimension is achieved than heretofore possible with photolithographictechniques.
申请人：RCA CORPORATION
代理人：Birgit E. Morris,D. S. Cohen,Lawrence P. Benjamin
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