Resistive random access memory and method for manu

专利名称：Resistive random access memory and

method for manufacturing the same

发明人：Mao-Teng Hsu申请号：US14562778申请日：20141208公开号：US09318703B2公开日：20160419

专利附图：

摘要：A resistive random access memory (RRAM) including a substrate, a dielectriclayer, memory cells and an interconnect structure is provided. The dielectric layer isdisposed on the substrate. The memory cells are vertically and adjacently disposed in the

dielectric layer, and each of the memory cells includes a first electrode, a secondelectrode and a variable resistance structure. The second electrode is disposed on thefirst electrode. The variable resistance structure is disposed between the first electrodeand the second electrode. In two vertically adjacent memory cells, the first electrode ofthe upper memory cell and the second electrode of the lower memory cell are disposedbetween the adjacent variable resistance structures and isolated from each other. Theinterconnect structure is disposed in the dielectric layer and connects the first electrodesof the memory cells.

申请人：Powerchip Technology Corporation

地址：Hsinchu TW

国籍：TW

代理机构：Jianq Chyun IP Office

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