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BQ2014HSNG4资料

2023-07-04 来源:意榕旅游网
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bq2014HLow-CostNiCd/NiMHGasGaugeICFeatures

➤Accurate measurement of avail-able capacity in NiCd or NiMHbatteries➤Low-cost battery management so-lution for pack integration

GeneralDescription

Thebq2014HNiCd/NiMHGasGaugeICisintendedforbattery-packorin-systeminstallationtomaintainanaccuraterecordofavailablebatterycapacity.TheICmonitorsavoltagedropacrossasenseresistorconnectedinseriesbetweenthenegativebatterytermi-nalandgroundtodeterminechargeanddischargeactivityofthebattery.Compensationsforbat-terytemperature,self-discharge,andrateofdischargeareappliedtothechargecountertoprovideavail-ablecapacityinformationacrossawiderangeofoperatingconditions.Batterycapacityisautomaticallyre-calibrated,or“learned,”inthecourseofadischargecyclefromfulltoempty.

Nominalavailablecapacitymaybedirectlyindicatedusingafive-segmentLEDdisplay.Thebq2014Halsosupportsasimplesingle-line

bidirectionalseriallinktoanexter-nalprocessor(commonground).The5kb/sHDQbusinterfacereducescommunicationsoverheadintheexternalmicrocontroller.

Internalregistersincludeavailablecapacityandenergy,temperature,voltageandcurrent,andbatterystatus.Theexternalprocessormayalsooverwritesomeofthebq2014Hgasgaugedataregisters.

Thebq2014Hcanoperatefromthebatteriesinthepack.TheREFout-putandanexternaltransistorallowasimple,inexpensivevoltageregu-latortosupplypowertothecircuitfromthecells.

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As little as12square inch ofPCB for complete circuitLowoperatingcurrent(120µAtypical)

Less than 100nA of dataretention current

➤High-speed (5kb/s) single-wirecommunication interface (HDQbus) for critical batteryparameters➤Communication with an externalcharge controller such as thebq2004➤DirectdriveofremainingcapacityLEDs➤Automaticrateandtemperaturecompensationofmeasurements➤16-pin narrowSOIC

Pin ConnectionsPin NamesLCOMLEDcommonoutputVSSSRDISPSBRBIHDQNCREFVCCSystemgroundSenseresistorinputDisplaycontrolinputBatterysenseinputRegisterbackupinputSerialcommunicationsinput/outputNoconnectVoltagereferenceoutputSupplyvoltageSEG1/PROG1LEDsegment1/program1inputSEG2/PROG2LEDsegment2/program2inputSEG3/PROG3LEDsegment3/program3inputSEG4/PROG4LEDsegment4/program4inputSEG5/PROG5LEDsegment5/program5inputDONEChargecompleteinputLCOMSEG1/PROG1SEG2/PROG2SEG3/PROG3SEG4/PROG4SEG5/PROG5DONEVSS1234 5678161514131211109VCCREFNCHDQRBISBDISPSR16-Pin Narrow SOICPN20140H..epsSLUS030A–JUNE 1999 - REVISED OCTOBER 20031

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bq2014H

DISPPin Descriptions

LCOM

LEDcommonoutput

Open-drainoutputthatswitchesVLEDs.TheswitchCCtosourcecurrentfortheisoffduringinitializationtoallowreadingofthesoftpull-uporpull-downprogramresis-tors.LCOMisalsohighimpedancewhentheSB

displayisoff.

SEG1–LEDdisplaysegmentoutputs(dualfunc-SEG5

tionwithPROG1–PROG5)

OutputsthateachmayactivateanLEDtosinkthecurrentsourcedfromLCOM.

RBI

PROGProgrammedfullcountselectioninputsPROG1–2

(dualfunctionwithSEG1–SEG2)

Three-levelinputpinsthatdefinethepro-grammedfullcount(PFC)thresholdsde-scribedinTable2.

HDQ

PROG3–Powergaugescaleselectioninputs(dualPROG4

functionwithSEG3–SEG4)

Three-levelinputpinsthatdefinethescaleNCfactordescribedinTable2.

REF

PROG5

Self-dischargerateselection(dualfunc-tionwithSEG5)

Three-levelinputpinthatdefinestheself-dischargeandbattery-compensationfac-VCC

torsasshowninTable1.

DONE

Chargecompleteinput

Communicatesthestatusofanexternalcharge-controllersuchasthebq2004Fast-ChargeICtothebq2014H.Note:ThispinmustbepulleddowntoVSSusinga200kΩresistor.

VSSGround

SR

Senseresistorinput

Thevoltagedrop(VSR)acrossthesensere-sistorRSismonitoredandintegratedovertimetointerpretchargeanddischargeactiv-ity.VSRVdrop,SSindicatescharge.TheeffectiveVSRO,asseenbythebq2014HisVSR+VOS.

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Displaycontrolinput

DISPhighdisablestheLEDdisplay.DISPtiedtoVrectlytoCCallowsPROGVorVXtoconnectdi-pull-downCCSSinsteadofthroughapull-uporresistor.DISPfloatingallowstheLEDdisplaytobeactiveduringcharge.DISPlowactivatesthedisplay.SeeTable1.

Secondarybatteryinput

Monitorsthebatterycell-voltagepotentialthroughahigh-impedanceresistivedividernetworkforend-of-dischargevoltage(EDV)thresholdsandforbattery-removeddetection.

Registerbackupinput

Providesbackuppotentialtothebq2014Hreg-isterswhileVabatterycanCCbeconnected≤3V.AstoragetoRBI.

capacitororSerialcommunicationinput/outputThisistheopen-drainbidirectionalcommu-nicationsport.

Noconnect

Voltagereferenceoutput

REFprovidesavoltagereferenceoutputforanoptionalmicroregulator.

Supplyvoltageinput

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bq2014H

Functional Description

General Operation

Thebq2014Hdeterminesbatterycapacitybymoni-toringtheamountofcurrentinputtoorremovedfromarechargeablebattery.Thebq2014Hmea-suresdischargeandchargecurrents,measuresbat-teryvoltage,estimatesself-discharge,monitorsthebatteryforlowbattery-voltagethresholds,andcom-pensatesfortemperatureandcharge/dischargerate.Currentmeasurementismadebymonitoringthevoltageacrossasmall-valueseriessenseresistorbe-tweenthenegativebatteryterminalandground.Thebq2014Hcompensatesthenominalavailablecapacityregisterfordischargerateandtempera-tureandreportsthecompensatedavailablecapacity.Thebq2014Husesthecompensatedavailable

capacitytodrivetheLEDdisplay.Inaddition,thebq2014Hestimatestheavailableenergyusingtheaver-agebatteryvoltageduringthedischargecycleandre-mainingcompensatedavailablecapacity.

Figure1showsatypicalbatterypackapplicationofthebq2014HusingtheLEDdisplaycapabilityasacharge-stateindicator.Thebq2014Hisconfiguredtodisplaycapacityinrelativedisplaymode.Therelativedisplaymodeusesthelastmeasureddischargecapacityofthebatteryasthebattery“full”reference.Apush-buttondisplayfeatureisavailableformomentarilyenablingtheLEDdisplay.

Thebq2014Hmonitorsthechargeanddischargecur-rentsasavoltageacrossasenseresistor.(SeeRSinFig-ure1.)AfilterbetweenthenegativebatteryterminalandtheSRpinisrequired.

R1bq2014HGas-Gauge ICREFC1LCOMSEG1/PROG1SEG2/PROG2SEG3/PROG3SEG4/PROG4SEG5/PROG5DONEVSSRBIHDQ1MDISPSR100K0.1µFVCCSBVCCQ1ZVNL110AVCCC2RB1RB2RSSee note 4Notes:1. Indicates optional.2. Programming resistors (5 max.) and ESD-protection diodes are not shown.3. RC on SR is required.4. A series diode is required on RBI if the bottom series cell is used as the backup source. If the cell is used, the backup capacitor is not required, and the anode is connected to the positive terminal of the cell.ChargerLoadF2014HBP.epsFigure 1.Battery Pack Application Diagram—LED Display

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bq2014H

VoltageThresholds

InconjunctionwithmonitoringVSRforcharge/dischargecurrents,thebq2014HmonitorsthebatterypotentialthroughtheSBpinfortheend-of-dischargevoltage(EDV)thresholds.

TheEDVthresholdlevelsareusedtodeterminewhenthebatteryhasreachedan“empty”state.

TheEDVthresholdsforthebq2014Hareprogrammablewiththedefaultvaluesfixedasfollows:

EDV1 (first) = 0.76V

EDVF(final) = EDV1 - 0.025V = 0.735V

Thebatteryvoltagedivider(RB1andRB2inFigure1)isusedtoscalethesevaluestothedesiredthreshold.IfVSBisbeloweitherofthetwoEDVthresholds,theas-sociatedflagislatchedandremainslatched,independ-entofVSB,untilthenextvalidcharge.

EDVmonitoringisdisabledifthedischargerateisgreaterthan2C(OVLDFlag=1)andresumes12secondaftertheratefallsbelow2C.TheVSBvalueisavailableovertheserialport.

TMP(hex)

0x1x2x3x4x5x6x7x8x9xAxBxCx

Temperature Range

< -30°C-30°C to -20°C-20°C to -10°C-10°C to 0°C0°C to 10°C10°C to 20°C20°C to 30°C30°C to 40°C40°C to 50°C50°C to 60°C60°C to 70°C70°C to 80°C> 80°C

RBIInput

TheRBIinputpinisusedwithastoragecapacitororex-ternalsupplytoprovidebackuppotentialtotheinternalbq2014HregisterswhenVCCdropsbelow3.0V.VCCisoutputonRBIwhenVCCisabove3.0V.Ifusinganexter-nalsupply(suchasthebottomseriescell)asthebackupsource,anexternaldiodeisrequiredforisolation.

Layout Considerations

Thebq2014HmeasuresthevoltagedifferentialbetweentheSRandVSSpins.VOS(theoffsetvoltageattheSRpin)isgreatlyaffectedbyPCboardlayout.Foroptimalresults,thePCboardlayoutshouldfollowthestrictruleofasingle-pointgroundreturn.Sharinghigh-currentgroundwithsmall-signalgroundcausesundesirablenoiseonthesmall-signalnodes.Additionally:

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Reset

Thebq2014HcanberesetbyremovingVCCandground-ingtheRBIpinfor15secondsorbycommandsovertheserialport.Theserialportresetcommandsequencere-quireswriting00htoregisterPPFC(address=1Eh)andthenwriting00htoregisterLMD(address=05h).

Temperature

Thebq2014Hinternallydeterminesthetemperaturein10°Cstepscenteredfromapproximately-35°Cto+85°C.Thetemperaturestepsareusedtoadaptchargeanddis-chargeratecompensations,self-dischargecounting,andavailablechargedisplaytranslation.

Thetemperaturerangeisavailableovertheserialportin10°Cincrements,asshowninthefollowingtable

Thecapacitors(C1andC2)shouldbeplacedascloseaspossibletotheVCCandSBpins,respectively,andtheirpathstoVSSshouldbeasshortaspossible.Ahigh-qualityceramiccapacitorof0.1µFisrecommendedforVCC.

Thesense-resistorcapacitorshouldbeplacedascloseaspossibletotheSRpin.

Thesenseresistor(RS)shouldbeascloseaspossibletothebq2014H.

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bq2014H

Gas Gauge Operation

TheoperationaloverviewdiagraminFigure2illustratestheoperationofthebq2014H.Thebq2014Haccumu-latesameasureofchargeanddischargecurrents,aswellasanestimationofself-discharge.Theaccumu-latedchargeanddischargecurrentsareadjustedfortemperatureandratetoprovidetheindicationofcom-pensatedavailablecapacitytothehostsystemoruser.Themaincounter,NominalAvailableCapacity(NAC),representstheavailablebatterycapacityatanygiventime.BatterychargingincrementstheNACregister,whilebatterydischargingandself-dischargedecrementtheNACregisterandincrementtheDCR(DischargeCountRegister).

TheDischargeCountRegisterisusedtoupdatetheLastMeasuredDischarge(LMD)registeronlyifacompletebatterydischargefromfulltoemptyoccurswithoutanypartialbatterycharges.Therefore,thebq2014Hadaptsitscapacitydeterminationbasedontheactualcondi-tionsofdischarge.

Thebattery'sinitialcapacityequalstheProgrammedFullCount(PFC)showninTable2.UntilLMDisup-dated,NACcountsuptobutnotbeyondthisthresholdduringsubsequentcharges.Thisapproachallowsthegasgaugetobecharger-independentandcompatiblewithanytypeofchargeregime.1.

LastMeasuredDischarge(LMD)orlearnedbatterycapacity:

LMDisthelastmeasureddischargecapacityofthebattery.Oninitialization(applicationofVCCorbat-teryreplacement),LMD=PFC.Duringsubsequentdischarges,theLMDisupdatedwiththelatestmeasuredcapacityintheDischargeCountRegisterrepresentingadischargefromfulltobelowEDV1.AqualifieddischargeisnecessaryforacapacitytransferfromtheDCRtotheLMDregister.TheLMDalsoservesasthe100%referencethresholdusedbytherelativedisplaymode.

InputsChargeCurrentRate andTemperatureCompensationDischargeCurrentSelf-DischargeTimerTemperatureCompensation-Main Countersand CapacityReference (LMD)+-++NominalAvailableCharge(NAC)5

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bq2014H

2.

ProgrammedFullCount(PFC)orinitialbat-terycapacity:

TheinitialLMDandgasgaugeratevaluesarepro-grammedbyusingPROG1–PROG4.Thebq2014HisconfiguredforagivenapplicationbyselectingaPFCvaluefromTable2.ThecorrectPFCmaybedeterminedbymultiplyingtheratedbatterycapac-ityinmAhbythesenseresistorvalue:Battery capacity (mAh)*sense resistor (Ω) =

PFC (mVh)

SelectingaPFCslightlylessthantheratedcapac-ityprovidesaconservativecapacityreferenceuntilthebq2014H“learns”anewcapacityreference.

Example:SelectingaPFCValueGiven:

Senseresistor=0.05ΩNumberofcells=10

Capacity=3500mAh,NiMHCurrentrange=50mAto1ARelativedisplaymode

Self-discharge=NAC47perday@25°C

Voltagedropoversenseresistor=2.5mVto50mVNominaldischargevoltage=1.2VTherefore:

3500mAh*0.05Ω= 175mVh

Table 1.Self-Discharge and Capacity Compensation

PinConnectionHZLPROG5Self-DischargeRateDisabledNACNAC6447DISPDisplay StateLEDs disabledLEDs on when chargingLEDs on for 4sTable 2.bq2014H Programmed Full CountmVh,VSRGain Selections

Pro-grammedFullCount(PFC)

-491524505640960368643379230720276482560022528

PROGx1-HHHZZZLLL

2-HZLHZLHZL

PROG4= L

PROG3= HSCALE =1/8061456351246142238434632028290

PROG4= Z or H

UnitsmVh/countmVhmVhmVhmVhmVhmVhmVhmVhmVhmV

PROG3= ZPROG3= LPROG3= HPROG3= ZPROG3= LSCALE =1/16030728225623021119217316014145

SCALE =1/32015414112811510696.086.480.070.422.5

SCALE =1/64076.870.464.057.653.048.043.240.035.211.25

SCALE =1/128038.435.232.028.826.424.021.620.017.65.6

SCALE =1/256019.217.616.014.413.212.010.810.08.82.8

VSRequivalent to 2counts/s (nom.)

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bq2014H

Select:

PFC=27648countsor173mVh

PROG1=lowPROG2=highPROG3=floatPROG4=lowPROG5=low

Theinitialfullbatterycapacityis173mVh(3460mAh)untilthebq2014H“learns”anewcapac-itywithaqualifieddischargefromfulltoEDV1.3.

NominalAvailableCapacity(NAC):

NACcountsupduringchargetoamaximumvalueofLMDanddownduringdischargeandself-dis-chargeto0.NACisresetto0oninitializationandonthefirstvalidchargefollowingdischargetoEDV1.Topreventoverstatementofchargeduringperiodsofovercharge,NACstopsincrementingwhenNAC=LMDor0.94∗LMDifT<0°C.4.

DischargeCountRegister(DCR):

TheDCRcountsupduringdischargeindependentofNACandcouldcontinueincreasingafterNAChasdecrementedto0.PriortoNAC=0(emptybattery),bothdischargeandself-dischargein-crementtheDCR.AfterNAC=0,onlydischargeincrementstheDCR.TheDCRresetsto0whenNAC≥0.94∗LMDandadischargeisdetected.TheDCRdoesnotrolloverbutstopscountingwhenitreachesFFh.

TheDCRvaluebecomesthenewLMDvalueonthefirstchargeafteravaliddischargetoVEDV1ifallthefollowingconditionsaremet:

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capacityreferenceinbatterychemistrieswithslopedvoltageprofilesduringdischarge.SAEmaybeconvertedtoanmWhvalueusingthefollowingformula:

E(mWh) =(SAEH∗256+SAEL)∗

1.2∗SCALE∗(RB1+RB2)

RS∗RB2

whereRB1,RB2,andRSareresistorvaluesinohms,asshowninFigure1.SCALEistheselectedscalefromTable2.

6.CompensatedAvailableCapacity(CACT)

CACTcountssimilarlytoNAC,butcontainstheavailablecapacitycompensatedfordischargerateandtemperature.

ChargeCounting

ChargeactivityisdetectedbasedonapositivevoltageontheSRinput.Ifchargeactivityisdetected,thebq2014HincrementsNACatarateproportionaltoVSRand,ifenabled,activatestheLEDdisplay.

Thebq2014HcountschargeactivitywhenthevoltageattheSRinput(VSRO)exceedstheminimumchargethreshold(VSRQ).AvalidchargeisdetectedwhenNAChasbeenupdatedtwicewithoutdischargingorreachingthedigitalmagnitudefiltertime-out.Onceavalidchargeisdetected,chargecountingcontinuesuntilVSR,includingoffset,fallsbelowVSRQ.

DischargeCounting

DischargeactivityisindicatedbyanegativevoltageontheSRinput.AlldischargecountswhereVSROislessthantheminimumdischargethreshold(VSRD)causetheNACregistertodecrementandtheDCRtoincrement.

Novalidchargeinitiations(chargesgreaterthan2NACupdateswhereVSRO>VSRQ)occurredduringtheperiodbetweenNAC≥0.94∗LMDandEDV1.

Theself-dischargeislessthan6.25%ofNAC.Thetemperatureis≥0°CwhentheEDV1levelisreachedduringdischarge.

ThedischargebeginswhenNAC≥0.94∗LMD.VDQisset.

II

Self-DischargeCounting

Thebq2014HcontinuouslydecrementsNACandincre-mentsDCRforself-dischargeonthebasisoftimeandtem-perature.

II

Charge/DischargeCurrent

Thebq2014Hcurrent-scaleregisters,VSRHandVSRL,canbeusedtodeterminethebatterychargeordis-chargecurrent.SeetheCurrentScaleRegisterdescrip-tionfordetails.

Thevaliddischargeflag(VDQ)indicateswhetherthepresentdischargeisvalidforLMDupdate.IftheDCRupdatevalueislessthan0.94∗LMD,LMDwillonlybemodifiedby0.94∗LMD.Thispre-ventsinvalidDCRvaluesfromcorruptingLMD.5.

ScaledAvailableEnergy(SAE):

SAEisusefulindeterminingtheavailableenergywithinthebattery,andmayprovideamoreuseful

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bq2014H

Count Compensations

ChargeCompensation

Twochargeefficiencycompensationfactorsareusedfortrickleandfastcharge.Tricklechargeisdefinedasarateofcharge 40°C

Trickle-ChargeCompensation

0.810.75

Fast-ChargeCompensation

0.940.88

Self-DischargeCompensation

Theself-dischargecompensationisprogrammedforanominalrateof164*NACperday,147∗NACperday,ordisabled.Thisistherateforabatterywithinthe20°C–30°Ctemperaturerange(TMPGG=6x).Thisratevariesacross8rangesfrom<10°Cto>70°C,doubling

Table 3.Self-Discharge Compensation

TemperatureStep< 10°C10–20°C20–30°C30–40°C40–50°C50–60°C60–70°C> 70°CTypical RatePROG5= ZNACNAC256128643216842PROG5= LNAC1889447NACNACNACNACNACNACNACNACNACNAC23.511.85.882.941.47CompensatedAvailableCapacity

NACisadjustedforrateofdischargeandtemperaturetoderivetheCACDandCACTvalues.

Correctionsfortherateofdischargearemadebyadjust-inganinternaldischargecompensationfactor.Thedis-chargefactorisbasedonthedischargerate.Thiscom-pensationisappliedtoNACtoderivethevalueintheCACDregister.

Thecompensationfactorsduringdischargeare:

ApproximateDischarge Rate

< 2C> 2C

Rate Efficiency

Factor

100%95%

NACNACNACwitheachhighertemperaturestep(10°C).SeeTable3.

DigitalMagnitudeFilter

Thebq2014Hhasadigitalfiltertoeliminatechargeanddischargecountingbelowasetthreshold.ThethresholdforbothVSRDandVSRQis250µV.

Temperaturecompensationduringdischargealsotakesplace.Atlowertemperatures,thecompensationfactorincreasesby0.05foreach10°Ctemperaturerangebelow10°C.ThiscompensationisappliedtoCACDtoderivethevalueintheCACTregister.Thetemperaturecom-pensationfactorfollowstheequation

Temperature Efficiency Factor = 1.00 - (0.05∗N)whereN=numberof10°Cstepsbelow10°C.Forexample,

T>10°C:Nominalcompensation,N=0

0°C8

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bq2014H

Table 6.bq2014H Current-Sensing Errors

SymbolINLINR

Parameter

Integratednon-linearityerror

Integrated non-repeatability error

Typical±2±1

Maximum

±4±2

Units%%

Notes

Add 0.1% per °C above or below 25°Cand 1% per volt above or below 4.25V.Measurement repeatability givensimilar operating conditions.

Error Summary

CapacityInaccurate

TheLMDissusceptibletoerroroninitializationorifnoupdatesoccur.Oninitialization,theLMDvaluein-cludestheerrorbetweentheprogrammedfullcapacityandtheactualcapacity.ThiserrorispresentuntilavaliddischargeoccursandLMDisupdated.(SeetheDCRdescription.)TheothercauseofLMDerrorisbat-terywear-out.Asthebatteryages,themeasuredcapac-itymustbeadjustedtoaccountforchangesinactualbatterycapacity.

ACapacityInaccuratecounter(CPI)ismaintainedandincrementedeachtimeavalidchargeoccurs(qualifiedbyNAC;seetheCPIregisterdescription).ItisresetwheneverLMDisupdatedfromtheDCR.Thecounterdoesnotwraparoundbutstopscountingat255.Theca-pacityinaccurateflag(CI)issetifLMDhasnotbeenup-datedfollowing64validcharges.

Done Input

Acharge-controlICoramicrocontrollerusestheDONEinputtocommunicatechargestatustothebq2014H.WhentheDONEinputisassertedhighonchargecom-pletion,thebq2014HsetsNAC=LMDandVDQ=1.TheDONEinputshouldbemaintainedhighaslongasthechargecontrollerormicrocontrollerkeepsthebat-teriesfull;otherwise,thepinshouldbeheldlow.

Communicating with the bq2014H

Thebq2014Hincludesasimplesingle-pin(HDQplusre-turn)serialdatainterface.Ahostprocessorusesthein-terfacetoaccessvariousbq2014Hregisters.Batterycharacteristicsmaybeeasilymonitoredbyaddingasin-glecontacttothebatterypack.Theopen-drainHDQpinonthebq2014Hshouldbepulledupbythehostsys-tem,ormaybeleftfloatingiftheserialinterfaceisnotused.

Theinterfaceusesacommand-basedprotocol,inwhichthehostprocessorsendsacommandbytetothebq2014H.Thecommanddirectsthebq2014Htoeitherstorethenexteightbitsofdatareceivedtoaregisterspecifiedbythecommandbyteoroutputtheeightbitsofdataspecifiedbythecommandbyte.(SeeFigure4.)Thecommunicationprotocolisasynchronousreturn-to-one.Commandanddatabytesconsistofastreamofeightbitsthathaveamaximumtransmissionrateof5Kbits/sec.Theleast-significantbitofacommandordatabyteistransmittedfirst.Theprotocolissimpleenoughthatitcanbeimplementedbymosthostproces-sorsusingeitherpolledorinterruptprocessing.Datainputfromthebq2014Hmaybesampledusingthepulse-widthcapturetimersavailableonsomemicrocon-trollers.

Ifacommunicationerroroccurs(e.g.,tCYCB>250µs),thebq2014HshouldbesentaBREAKtoreinitiatetheserialinterface.ABREAKisdetectedwhentheHDQpinisdriventoalogic-lowstateforatime,tBorgreater.TheHDQpinshouldthenbereturnedtoitsnormalready-highlogicstateforatime,tBR.Thebq2014Hisnowreadytoreceiveacommandfromthehostproces-sor.

Current-SensingError

Table6showsthenon-linearityandnon-repeatabilityerrorsassociatedwiththebq2014Hcurrentsensing.Table7illustratesthecurrent-sensingerrorasafunc-tionofVOS.Adigitalfilterpreventschargeanddis-chargecountstotheNACregisterwhenVSROisbe-tweenVSRQandVSRD.

Table 7.VOS-RelatedCurrent Sense Error

(Current = 1A)

VOS(µV)50100150180

200.250.500.750.90

Sense Resistor501000.100.050.200.100.300.150.360.18

mΩ

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bq2014H

Thereturn-to-onedatabitframeconsistsofthreedis-tinctsections:1.

Thefirstsectionisusedtostartthetransmissionbyeitherthehostorthebq2014HtakingtheHDQpintoalogic-lowstateforaperiod,tSTRH;B.

Thenextsectionistheactualdatatransmission,wherethedatashouldbevalidbyaperiod,tDSU;B,afterthenegativeedgeusedtostartcommunica-tion.Thedatashouldbeheldforaperiod,tDH;DV,toallowthehostorbq2014Htosamplethedatabit.ThefinalsectionisusedtostopthetransmissionbyreturningtheHDQpintoalogic-highstatebyatleastaperiod,tSSU;B,afterthenegativeedgeusedtostartcommunication.Thefinallogic-highstateshouldbeuntilaperiodtCYCH;B,toallowtimetoen-surethatthebittransmissionwasstoppedprop-erly.Thetimingsfordataandbreakcommunicationaregivenintheserialcommunicationtimingspeci-ficationandillustrationsections.

0

The bq2014H outputs the requested regis-ter contents specified by the address por-tion of command code.

The following eight bits should be writtento the register specified by the address por-tion of command code.

1

2.

Thelower7-bitfieldofthecommandcodecontainstheaddressportionoftheregistertobeaccessed:

Command Code Bits

7-6

5

4AD4

3AD3

2AD2

1AD1

0AD0(LSB)

3.

AD6AD5

PrimaryStatusFlagsRegister(FLGS1)

TheFLGS1register(address=01h)containsthepri-marybq2014Hflags.

Thechargestatusflag(CHGS)isassertedwhenavalidchargerateisdetected.ChargerateisdeemedvalidwhenVSRO>VSRQ.AVSROoflessthanVSRQordischargeactivityclearsCHGS.TheCHGSvaluesare

FLGS1 Bits

7CHGS

6-5-4-3-2-1-0-

Communicationwiththebq2014Hisalwaysperformedwiththebittransmittedfirst.Figure5showsanexampleofacommunicationsequencetoreadthebq2014HNACHregister.

bq2014H Command Code andRegisters

Thebq2014HstatusregistersarelistedinTable8andde-scribedbelow.AllregistersareRead/Writeinthebq2014H.Caution:Whenwritingtobq2014Hregistersensurethatproperdataarewritten.Awrite-verifyreadisrecommended.

whereCHGSis01

Either discharge activity detected orVSRO≤VSRQVSRO>VSRQ

CommandCode

Thebq2014Hlatchesthecommandcodewheneightvalidcommandbitshavebeenreceivedbythebq2014H.Thecommandcodecontainstwofields:

II

W/Rbit

Commandaddress

Thebatteryreplacedflag(BRP)isassertedwheneverthebq2014HisreseteitherbyapplicationofVCCorbyaserialportcommand.BRPisresetwheneitheravalidchargeactionincrementsNACtobeequaltoLMD,oravalidchargeactionisdetectedaftertheEDV1flagisas-serted.BRP=1signifiesthatthedevicehasbeenreset.TheBRPvaluesare

FLGS1 Bits

7-6BRP

5-4-3-2-1-0-

TheW/Rbitofthecommandcodeisusedtoselectwhetherthereceivedcommandisforareadorawritefunction:TheW/Rvaluesare

Command Code Bits

7W/R6-5-4-3-2-1-0-

whereBRPis01

Battery is charged untilNAC=LMDor dis-charged until the EDV1 flag is assertedbq2014H is reset

whereW/Ris

4-10

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bq2014HSend Host to bq-HDQCDMRSend Host to bq-HDQ orReceive from bq-HDQDatatRRAddressBreakLSBBit0R/WMSBBit7tRSPSStart-bitAddress-Bit/Data-BitStop-BitTD201807.epsFigure 4.bq2014H Communication ExampleWritten by Host to bq2014HCMDR = 03hLSBMSBReceived by Host to bq2014HNACH = 65hLSBMSBBreak1100000010100110HDQtRSPSTD2014Hcom.epsFigure 5.Typical Communication with the bq2014H11

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bq2014H

Table 8.bq2014H Command and Status Registers

SymbolFLGS1

Register Name

Loc.Read/Control Field(hex)Write7(MSB)6543210(LSB)Primary status flags

01hRCHGSBRP0CIVDQ1EDV1EDVF

register

TMPTemperature register02hRTMP3TMP2TMP1TMP0GG3GG2GG1GG0

Nominalavailablecapac-NACH03hR/WNACH7NACH6NACH5NACH4NACH3NACH2NACH1NACH0

ityhighbyteregisterNominalavailable

NACL17hR/WNACL7NACL6NACL5NACL4NACL3NACL2NACL1NACL0

capacitylowbyteregisterBatteryidentification

BATID04hR/WBATID7BATID6BATID5BATID4BATID3BATID2BATID1BATID0

register

Last measured

LMD05hR/WLMD7LMD6LMD5LMD4LMD3LMD2LMD1LMD0

discharge register

Secondary status flags

FLGS206hRRSVDDR2DR1DR0ENINTVQRSVDOVLD

register

Program pin pull-down

PPD07hRRSVDRSVDRSVDPPD5PPD4PPD3PPD2PPD1

register

Program pin pull-up

PPU08hRRSVDRSVDRSVDPPU5PPU4PPU3PPU2PPU1

registerCapacity

CPI09hR/WCPI7CPI6CPI5CPI4CPI3CPI2CPI1CPI0

inaccuratecountregisterBattery voltage

VSB0bhRVSB7VSB6VSB5VSB4VSB3VSB2VSB1VSB0

register

End-of-dischargethresh-VTS0chR/WVTS7VTS6VTS5VTS4VTS3VTS2VTS1VTS0

oldselectregisterTemperatureanddis-CACTchargeratecompensated0dhR/WCACT7CACT6CACT5CACT4CACT3CACT2CACT1CACT0

availablecapacityDischarge rate com-CACDpensated available0ehR/WCACD7CACD6CACD5CACD4CACD3CACD2CACD1CACD0

capacity

Scaledavailableenergy

SAEH0fhRSAEH7SAEH6SAEH5SAEH4SAEH3SAEH2SAEH1SAEH0

high byte register

Scaledavailableenergy

SAEL10hRSAEL7SAEL6SAEL5SAEL4SAEL3SAEL2SAEL1SAEL0

low byte register

RCACRelative CAC11hR-RCAC6RCAC5RCAC4RCAC3RCAC2RCAC1RCAC0VSRHCurrent scale high12hRVSRH7VSRH6VSRH5VSRH4VSRH3VSRH2VSRH1VSRH0VSRLCurrent scale low13hRVSRL7VSRL6VSRL5VSRL4VSRL3VSRL2VSRL1VSRL0DCRDischarge register18hR/WDCR7DCR6DCR5DCR4DCR3DCR2DCR1DCR0PPFCProgram pin data1ehR/WRSVDRSVDRSVDRSVDRSVDRSVDRSVDRSVDINTSSVOSInterrupt38hR/WRSVDRSVDRSVDRSVDDCHGIRSVDRSVDCHGINotes:RSVD= reserved.

All other registers not documented are reserved.

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bq2014H

TheEDV1valuesare

Thecapacityinaccurateflag(CI)isusedtowarnthe

userthatthebatteryhasbeenchargedasubstantialnumberoftimessinceLMDhasbeenupdated.TheCIflagisassertedonthe64thchargeafterthelastLMDupdateorwhenthebq2014Hisreset.TheflagisclearedafteranLMDupdate.TheCIvaluesare

FLGS1 Bits

7-6-5-4CI

3-2-1-0-FLGS1 Bits

7-6-5-4-3-2-1EDV1

0-

whereEDV1is01

Valid charge action detected,VSB≥VTSVSBwhereCIis01

WhenLMDis updated with a valid full dis-charge

After the 64th valid charge action with noLMDupdates or the bq2014H is reset

Thefinalend-of-dischargewarningflag(EDVF)flagisusedtowarnthatbatterypowerisatafailurecondi-tion.Allsegmentdriversareturnedoff.TheEDVFflagislatcheduntilavalidchargehasbeendetected.TheEDVFthresholdisset25mVbelowtheEDV1threshold.TheEDVFvaluesare

FLGS1 Bits

7-6-5-4-3-2-1-0EDVF

Thevaliddischargeflag(VDQ)isassertedwhenthebq2014HisdischargedfromNAC=0.94∗LMD.TheflagremainssetuntileitherLMDisupdatedoroneofthreeactionsthatcanclearVDQoccurs:

I

WhenNAChas been reduced by more than 6.25%because of self-discharge sinceVDQwas set.

AvalidchargeactionissustainedatVSRO>VSRQforatleast2NACupdates.

TheEDV1flagwassetatatemperaturebelow0°C

whereEDVFis01

Validchargeactiondetected,VSB≥(VTS-25mV)VSB< (VTS-25mV) providing the dischargerate is < 2C

I

I

TemperatureRegister(TMP)

TheTMPregister(address=02h)containsthebatterytemperature.

TheVDQvaluesare

FLGS1 Bits

7-6-5-4-3VDQ

2-1-0-

whereVDQis0

Self-discharge of more than 6.25% ofNAC,valid charge action detected,EDV1 assertedwith the temperature less than 0°C,or resetOn first discharge afterNAC≥0.94∗LMD

Thebq2014Hcontainsaninternaltemperaturesensor.Thetemperatureisusedtosetchargeanddischargeef-ficiencyfactorsaswellastoadjusttheself-dischargeco-efficient.ThetemperatureregistercontentsmaybetranslatedasshowninTable9.

TMPTemperature Bits

7

6

5

4

3-2-1-0-

1

TMP3TMP2TMP1TMP0

Thefirstend-of-dischargewarningflag(EDV1)warnstheuserthatthebatteryisalmostempty.Thefirstsegmentpin,SEG1,ismodulatedata4HzrateifthedisplayisenabledonceEDV1isasserted,whichshouldwarntheuserthatlossofbatterypowerisimmi-nent.TheEDV1flagislatcheduntilavalidchargehasbeendetected.TheEDV1thresholdisexternallycon-trolledviatheVTSregister(seeVoltageThresholdReg-ister).

Thebq2014Hcalculatesthegasgaugebits,GG3-GG0asafunctionofCACTandLMD.Theresultsofthecalculationgiveavailablecapacityin116incrementsfrom0to1516.

TMPGas Gauge Bits

7-6-5-4-3GG3

2GG2

1GG1

0GG0

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bq2014H

IfDCR<0.94LMD,thenLMDissetto0.94∗LMD.

Table 9.Temperature Register

TMP30000000011111

TMP20000111100001

TMP10011001100110

TMP00101010101010

TemperatureT<-30°C-30°C < T < -20°C-20°C < T < -10°C-10°C < T < 0°C0°C < T < 10°C10°C < T < 20°C20°C < T < 30°C30°C < T < 40°C40°C < T < 50°C50°C < T < 60°C60°C < T < 70°C 70°C < T < 80°C

T>80°C

SecondaryStatusFlagsRegister(FLGS2)

TheFLGS2register(address=06h)containsthesecon-darybq2014Hflags.

Bit7andbit1ofFLGS2arereserved.Donotwritetothesebits.

Thedischargerateflags,DR2–0,arebits6–4.

FLGS2 Bits543DR1DR0-

7

-6DR22-1-

0

Theyareusedtodeterminethecurrentdischargere-gimeasfollows:DR2000

DR1001

DR0010

Discharge RateDRATE<0.5C0.5C≤DRATE<2C2C NominalAvailableCapacityRegisters(NACH/NACL)

TheNACHhigh-byteregister(address=03h)andtheNACLlow-byteregister(address=17h)arethemaingasgauging registers for the bq2014H.TheNACregisters are

incrementedduringchargeactionsanddecrementeddur-ingdischargeandself-dischargeactions.NACHand

NACLaresetto0duringabq2014Hreset.

WritingtotheNACregistersaffectstheavailablechargecountsand,therefore,affectsthebq2014Hgasgaugeopera-tion.DonotwritetheNACregisterstoavaluegreaterthanLMD.

Theenableinterruptflag(ENINT)isatestbitusedtodetermineVSRactivitysensedbythebq2014H.Thestateofthisbitwillvaryandshouldbeignoredbythesystem.

FLGS2 Bits543--ENINT

7-6-2-1-

0Thevalidchargeflag(VQ),bit2ofFLGS2,isusedtoindicatewhetherthebq2014Hrecognizesavalidchargecondition.ThisbitisresetonthefirstdischargeafterNAC=LMD.TheVQvaluesare

FLGS2 Bits543---

BatteryIdentificationRegister(BATID)

TheBATIDregister(address=04h)isavailableforusebythesystemtodeterminethetypeofbatterypack.TheBATIDcontentsareretainedaslongasVRBIisgreaterthan2V.ThecontentsofBATIDhavenoeffectontheoperationofthebq2014H.Thereisnodefaultsettingforthisregister.

7-6-2VQ1-

0

whereVQis01

Valid charge action not detected between adischarge fromNAC=LMDand EDV1Valid charge action detected

LastMeasuredDischargeRegister(LMD)

LMDistheregister(address=05h)thatthebq2014Husesasameasuredfullreference.Thebq2014HadjustsLMDbasedonthemeasureddischargecapacityofthebatteryfromfulltoempty.Inthiswaythebq2014Hup-datesthecapacityofthebattery.LMDissettoPFCduringabq2014Hreset.

LMDissettoDCRuponthefirstvalidchargeafterEDVissetifVDQisset.

Theoverloadflag(OVLD)isassertedwhenadischargerateinexcessof2Cisdetected.OVLDremainsassertedaslongastheconditionpersistsandiscleared0.5sec-ondsaftertheratedropsbelow2C.Theoverloadcondi-tionisusedtostopsamplingofthebatteryterminalchar-acteristicsforend-of-dischargedetermination.

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bq2014H

FLGS2 Bits43--

7-6-5-2-1-0OVLD

BatteryVoltageRegister(VSB)

Thebatteryvoltageregisterisusedtoreadthesingle-cellbatteryvoltageontheSBpin.TheVSBregister(address=0Bh)isupdatedapproximatelyoncepersecondwiththepresentvalueofthebatteryvoltage.VSB=1.2V*(VSB/256).

VSBRegister Bits

7

6

5

4

3

2

1

0

VSB7VSB6VSB5VSB4VSB3VSB2VSB1VSB0

ProgramPinPull-DownRegister(PPD)

ThePPDregister(address=07h)containssomeofthepro-grammingpininformationforthebq2014H.Thesegmentdrivers,SEG1–5,haveacorrespondingPPDregisterloca-tion,PPD1–5.Agivenlocationissetifapull-downresistorhasbeendetectedonitscorrespondingsegmentdriver.Forexample,ifSEG1andSEG4havepull-downresistors,thecontentsofPPDarexxx01001.

ProgramPinPull-UpRegister(PPU)

ThePPUregister(address=08h)containstherestoftheprogrammingpininformationforthebq2014H.Theseg-mentdrivers,SEG1–5,haveacorrespondingPPUregisterlocation,PPU1–5.Agivenlocationissetifapull-upresis-torhasbeendetectedonitscorrespondingsegmentdriver.Forexample,ifSEG3andSEG5havepull-upresistors,thecontentsofPPUarexxx10100.

PPD/PPUBits

7

6

5

4

3

2

1

0

VoltageThresholdRegister(VTS)

Theend-of-dischargethresholdvoltages(EDV1andEDVF)canbesetusingtheVTSregister(address=0Ch).TheVTSregistersetstheEDV1trippoint.EDVFisset25mVbelowEDV1.ThedefaultvalueintheVTSregisterisA2h,representingEDV1=0.76VandEDVF=0.735V.EDV1=1.2V*(VTS/256).

VTSRegister Bits

7

6

5

4

3

2

1

0

VTS7VTS6VTS5VTS4VTS3VTS2VTS1VTS0

RSVDRSVDRSVDPPU5PPU4PPU3PPU2PPU1RSVDRSVDRSVDPPD5PPD4PPD3PPD2PPD1

CompensatedAvailableChargeRegisters(CACT/CACD)

TheCACDregister(address=0Eh)containstheNACvaluecompensatedfordischargerate.Thisisamono-toniclydecreasingvalueduringdischarge.Ifthedis-chargerateis>2CthenthisvalueislowerthanNAC.CACDisupdatedonlywhenthedischargeratecompen-satedNACvalueisalowervaluethanCACDduringdischarge.Duringcharge,CACDiscontinuouslyup-datedwiththeNACvalue.

TheCACTregister(address=0Dh)containstheCACDvaluecompensatedfortemperature.CACTwillcontainavaluelowerthanCACDwhenthebatterytemperatureisbelow10°C.TheCACTvalueisalsousedincalculat-ingtheLEDdisplaypattern.

CapacityInaccurateCountRegister(CPI)

TheCPIregister(address=09h)isusedtoindicatethenumberoftimesabatteryhasbeenchargedwithoutanLMDupdate.Becausethecapacityofarechargeablebatteryvarieswithageandoperatingconditions,thebq2014Hadaptstothechangingcapacityovertime.Acompletedischargefromfull(NAC≥0.94∗LMD)toempty(EDV1=1)isrequiredtoperformanLMDupdateassumingtherehavebeennointerveningvalidcharges,thetemperatureisgreaterthanorequalto0°C,andtherehasbeennomorethana6%self-dischargereduction.

TheCPIregisterisincrementedeverytimeavalidchargeisdetected.WhenNAC≥0.94*LMD,however,theCPIregisterincrementsonthefirstvalidcharge;CPIdoesnotincrementagainforavalidchargeuntilNAC<0.94*LMD.ThispreventscontinuoustricklechargingfromincrementingCPIifself-dischargedecre-mentsNAC.TheCPIregisterincrementsto255with-outrollingover.WhenthecontentsofCPIareincre-mentedto64,thecapacityinaccurateflag,CI,isas-sertedintheFLGS1register.TheCPIregisterisresetwheneveranupdateoftheLMDregisterisperformed,andtheCIflagisalsocleared.

ScaledAvailableEnergyRegisters(SAEH/SAEL)

TheSAEHhigh-byteregister(address=0Fh)andtheSAELlow-byteregister(address=10h)areusedtoscalebatteryvoltageandCACTtoavaluethatcanbetrans-latedtowatt-hoursremainingunderthepresentcondi-tions.

RelativeCACRegister(RCAC)

TheRCACregister(address=11h)providestherelativebatterystate-of-chargebydividingCACTbyLMD.

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bq2014H

RCACvariesfrom0to64hrepresentingrelativestate-of-chargefrom0to100%.

VoltageOffset(VOS)Interrupt(INTSS)

TheINTSSregister(address=38h)isusefulduringin-tialcharacterizationofbq2014Hdesigns.Whenthebq2014Hcountsachargepulse,CHGI(bit0)willbesetto1.Whenthebq2014Hcountsadischargepulse,DCHGI(bit3)willbesetto1.AllotherlocationsintheINTSSregisterarereserved.

CurrentScaleRegister(VSRH/VSRL)

TheVSRHregister(address=12h)andtheVSRLregis-ter(address=13h)reporttheaveragesignalacrosstheSRandVSSpins.Thebq2050Hupdatesthisregisterpairevery22.5s.VSRH(high-byte)andVSRL(low-byte)forma16-bitsignedintegervaluerepresentingtheaver-agecurrentduringthistime.Thebatterypackcurrentcanbecalculatedfrom:

|I(mA)| = (VSRH∗256 +VSRL)/(8∗RS)where:

RS= sense resistor value inΩ.

VSRH= high-byte value of battery currentVSRL= low-byte value of battery current

Thebq2014Hindicatesanaveragedischargecurrentwitha“1”intheMSBpositionoftheVSRHregister.Tocalculatedischargecurrent,usethe2’scomplementiftheconcatenatedregistercontentsintheaboveequa-tion.

Display

Thebq2014Hcandirectlydisplaycapacityinformationusinglow-powerLEDs.IfLEDsareused,theprogrampinsshouldberesistivelytiedtoVCCorVSSforapro-gramhighorprogramlow,respectively.

Thebq2014Hdisplaysthebatterychargestateinrelativemode.Inrelativemode,thebatterychargeisrepresentedasapercentageoftheLMD.EachLEDsegmentrepre-sents20%oftheLMD.

Thecapacitydisplayisalsoadjustedforthepresentbat-terytemperatureanddischargerate.ThetemperatureadjustmentreflectstheavailablecapacityatagiventemperaturebutdoesnotaffecttheNACregister.ThetemperatureadjustmentsaredetailedintheCACTandCACDregisterdescriptions.

WhenDISPistiedtoVCC,theSEG1–5outputsareinac-tive.WhenDISPisleftfloating,thedisplaybecomesac-tivewheneverthebq2014HdetectsachargeinprogressVSRO>VSRQ.Whenpulledlow,thesegmentoutputsbe-comeactiveforaperiodoffourseconds,±0.5seconds.Thesegmentoutputsaremodulatedastwobanks,withsegments1,3,and5alternatingwithsegments2and4.Thesegmentoutputsaremodulatedatapproximately100Hzwitheachsegmentbankactivefor30%ofthepe-riod.

SEG1blinksata4HzratewheneverVSBhasbeende-tectedtobebelowVEDV1(EDV1=1),indicatingalow-batterycondition.VSBbelowVEDVF(EDVF=1)disablesthedisplayoutput.

DischargeCountRegister(DCR)

TheDCRregister(address=18h)storesthehigh-byteofthedischargecount.DCRisresettozeroatthestartofavaliddischargecycleandcancounttoamaximumofFFh.DCRwillnotincrementifEDV1=1andwillnotrolloverfromFFh.

ProgramPinFullCount(PPFC)

ThePPFCregistercontainsinformationconcerningtheprogrampinconfiguration.Thisinformationisusedtodeterminethedataintegrityofthebq2014H.Theonlyapproveduserapplicationforthisregisteristowriteazerotothisregisteraspartofaresetre-quest.

Therecommendedresetmethodforthebq2014His

II

WritePPFCtozeroWriteLMDtozero

Microregulator

Amicropowersourceforthebq2014Hcanbeinexpen-sivelybuiltusingaFETandanexternalresistor.(SeeFigure1.)

Aftertheseoperations,asoftwareresetwilloccur.Resettingthebq2014Hsetsthefollowing:

II

LMD=PFC

CPI,VDQ,RCAC,NACH/L,CACH/L,SAEH/L,NMCV=0CIandBRP=1

I

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bq2014H

Absolute Maximum Ratings

SymbolVCC

All other pinsREFVSRTOPRNote:

ParameterRelative toVSSRelative toVSSRelative toVSSRelative toVSS

Operating temperature

Minimum-0.3-0.3-0.3-0.30

Maximum+7.0+7.0+8.5Vcc+0.7+70

UnitVVVV°C

Current limited by R1 (see Figure 1)100kΩseries resistor should be used toprotect SR in case of a shorted battery.Commercial

Notes

Permanent device damage may occur ifAbsolute Maximum Ratingsare exceeded.Functional

operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet.Exposure to conditions beyond the operational limits for extended periods of time may affect device reli-ability.

DC Voltage Thresholds(TA=TOPR; V = 3.0 to 6.5V)

SymbolVEDV1VEDVFVSROVSRQVSRDNote:

ParameterFirst empty warningFinal empty warningSR sense rangeValid chargeValid discharge

Minimum0.73VEDV1- 0.035

-300250-Typical0.76VEDV1- 0.025

---Maximum0.79VEDV1- 0.015

+500--250

UnitVVmVµVµV

Notes

SB,defaultSB,defaultSR,VSR+VOSVSR+VOS(see note)VSR+VOS(see note)

VOSisaffectedbyPCboardlayout.Properlayoutguidelinesshouldbefollowedforoptimalperformance.See “LayoutConsiderations.”

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bq2014H

DC Electrical Characteristics(TA=TOPR)

SymbolVCCVOSVREFRREFICCVSBRSBmaxIDISPILCOMIRBIRHDQRSRVIHPFCVILPFCVIZPFCVOLSLVOLSHVOHMLVOHMHIOLSIOLVOLVIHDQVILDQRPROGRFLOATNote:

Parameter

Supply voltageOffset referred toVSRReference at 25°C

Reference at -40°C to +85°CReference input impedanceNormal operation

Battery input

SB input impedanceDISPinput leakageLCOMinput leakage

RBI data retention currentInternalpulldownSR input impedanceLogic input highLogic input lowLogic input Z

SEGoutputlow,lowVCCSEGoutputlow,highVCC

Mini-mum3.0-5.74.52.0---010--0.2-50010VCC- 0.2

-float

--TypicalMaximumUnit4.25±506.0-5.090120170----------0.10.4--------5

6.5±1506.37.5-135180250VCC-50.2100---VSS+ 0.2float

------0.3-0.8200-VµVVVMΩµAµAµAVMΩµAµAnAKΩMΩVVVVVVVmAmAVVVKΩMΩ

Notes

VCCexcursion from < 2.0V to≥3.0V initializes the unit.DISP=VCCIREF= 5µAIREF= 5µAVREF= 3V

VCC= 3.0V,HDQ= 0VCC= 4.25V,HDQ= 0VCC= 6.5V,HDQ= 00 VRBI>VCC< 3V

-200mV VCC= 3V,IOLS≤1.75mASEG1–SEG5

VCC= 6.5V,IOLS≤11.0mASEG1–SEG5

VCC=3V,IOHLCOM=-5.25mAVCC>3.5V,IOHLCOM=-33.0mAAtVOLSH= 0.4V, VCC= 6.5VAt VOL=VSS+ 0.3V, HDQIOL≤5mA,HDQHDQHDQPROG1–5PROG1–5LCOMoutput high, lowVCCVCC- 0.3LCOMoutput high, highVCCVCC- 0.6SEGsink current11.0Open-drain sink current5.0Open-drain output low-HDQinput high2.5HDQinput low-Softpull-uporpull-downresis--torvalue(forprogramming)Float state external impedance-All voltages relative toVSS.

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bq2014H

High-Speed Serial Communication Timing Specification(TA=TOPR)

SymboltCYCHtCYCBtSTRHtSTRBtDSUtDSUBtDHtDVtSSUtSSUBtRSPStBtBRNote:

Parameter

Cycle time, host to bq2014H (write)Cycle time, bq2014H to host (read)Start hold, host to bq2014H (write)Start hold, bq2014H to host (read)Data setupData setupData holdData validStop setupStop setup

Response time, bq2014H to hostBreak

Break recovery

Minimum190190532--90---19019040

TypicalMaximum

-205------------250--5050-80145145320--Unitµsµsnsµsµsµsµsµsµsµsµsµsµs

NotesSee note

The open-drainHDQpin should be pulled to at leastVCCby the host system for properHDQoperation.HDQmay be left floating if the serial interface is not used.

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bq2014HBreak TimingtBtBRTD201803.epsHost to bq2014HWrite \"1\" Write \"0\" tSTRHtDSUtDHtSSUtCYCHbq2014H to HostRead \"1\" Read \"0\" tSTRBtDSUBtDVtSSUBtCYCB20

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bq2014H

16-PinSOICNarrow (SN)

16-PinSN(0.150\"SOIC)DeBInchesDimensionAA1Min.0.0600.0040.0130.0070.3850.1500.0450.2250.015Max.0.0700.0100.0200.0100.4000.1600.0550.2450.035MillimetersMin.1.520.100.330.189.783.811.145.720.38Max.1.780.250.510.2510.164.061.406.220.89EHBCDECAA1.004LeHLOrdering Informationbq2014HTemperatureRange:blank=Commercial(0to+70°C)PackageOption:SN=16-pinnarrowSOICDevice:bq2014HGas-GaugeIC21

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PACKAGEOPTIONADDENDUM

www.ti.com

25-Jun-2008

PACKAGINGINFORMATION

OrderableDeviceBQ2014HSNBQ2014HSNG4BQ2014HSNTRBQ2014HSNTRG4

(1)

Status(1)ACTIVEACTIVEACTIVEACTIVE

PackageTypeSOICSOICSOICSOIC

PackageDrawing

DDDD

PinsPackageEcoPlan(2)

Qty16161616

4040

Green(RoHS&noSb/Br)Green(RoHS&noSb/Br)

Lead/BallFinishCUNIPDAUCUNIPDAUCUNIPDAUCUNIPDAU

MSLPeakTemp(3)Level-2-260C-1YEARLevel-2-260C-1YEARLevel-2-260C-1YEARLevel-2-260C-1YEAR

2500Green(RoHS&

noSb/Br)2500Green(RoHS&

noSb/Br)

Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.

LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.

NRND:Notrecommendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.

PREVIEW:Devicehasbeenannouncedbutisnotinproduction.Samplesmayormaynotbeavailable.OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.

(2)

EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.ti.com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.

Pb-Free(RoHS):TI'sterms\"Lead-Free\"or\"Pb-Free\"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.

Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.

Green(RoHS&noSb/Br):TIdefines\"Green\"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.1%byweightinhomogeneousmaterial)

(3)

MSL,PeakTemp.--TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.

ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.Effortsareunderwaytobetterintegrateinformationfromthirdparties.TIhastakenandcontinuestotakereasonablestepstoproviderepresentativeandaccurateinformationbutmaynothaveconducteddestructivetestingorchemicalanalysisonincomingmaterialsandchemicals.TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimitedinformationmaynotbeavailableforrelease.

InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.

Addendum-Page1

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PACKAGEMATERIALSINFORMATION

www.ti.com

11-Mar-2008

TAPEANDREELINFORMATION

*Alldimensionsarenominal

Device

PackagePackagePinsTypeDrawingSOIC

D

16

SPQ

ReelReelDiameterWidth(mm)W1(mm)330.0

16.4

A0(mm)B0(mm)K0(mm)

P1(mm)8.0

WPin1(mm)Quadrant16.0

Q1

BQ2014HSNTR25006.510.32.1

PackMaterials-Page1

元器件交易网www.cecb2b.com

PACKAGEMATERIALSINFORMATION

www.ti.com

11-Mar-2008

*Alldimensionsarenominal

DeviceBQ2014HSNTR

PackageType

SOIC

PackageDrawing

D

Pins16

SPQ2500

Length(mm)

346.0

Width(mm)346.0

Height(mm)

33.0

PackMaterials-Page2

元器件交易网www.cecb2b.com

元器件交易网www.cecb2b.com

IMPORTANTNOTICE

TexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsandservicesatanytimeandtodiscontinueanyproductorservicewithoutnotice.Customersshouldobtainthelatestrelevantinformationbeforeplacingordersandshouldverifythatsuchinformationiscurrentandcomplete.AllproductsaresoldsubjecttoTI’stermsandconditionsofsalesuppliedatthetimeoforderacknowledgment.

TIwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordancewithTI’sstandardwarranty.TestingandotherqualitycontroltechniquesareusedtotheextentTIdeemsnecessarytosupportthiswarranty.Exceptwheremandatedbygovernmentrequirements,testingofallparametersofeachproductisnotnecessarilyperformed.

TIassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheirproductsand

applicationsusingTIcomponents.Tominimizetherisksassociatedwithcustomerproductsandapplications,customersshouldprovideadequatedesignandoperatingsafeguards.

TIdoesnotwarrantorrepresentthatanylicense,eitherexpressorimplied,isgrantedunderanyTIpatentright,copyright,maskworkright,orotherTIintellectualpropertyrightrelatingtoanycombination,machine,orprocessinwhichTIproductsorservicesareused.InformationpublishedbyTIregardingthird-partyproductsorservicesdoesnotconstitutealicensefromTItousesuchproductsorservicesorawarrantyorendorsementthereof.Useofsuchinformationmayrequirealicensefromathirdpartyunderthepatentsorotherintellectualpropertyofthethirdparty,oralicensefromTIunderthepatentsorotherintellectualpropertyofTI.

ReproductionofTIinformationinTIdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalterationandisaccompaniedbyallassociatedwarranties,conditions,limitations,andnotices.Reproductionofthisinformationwithalterationisanunfairanddeceptivebusinesspractice.TIisnotresponsibleorliableforsuchaltereddocumentation.Informationofthirdpartiesmaybesubjecttoadditionalrestrictions.

ResaleofTIproductsorserviceswithstatementsdifferentfromorbeyondtheparametersstatedbyTIforthatproductorservicevoidsallexpressandanyimpliedwarrantiesfortheassociatedTIproductorserviceandisanunfairanddeceptivebusinesspractice.TIisnotresponsibleorliableforanysuchstatements.

TIproductsarenotauthorizedforuseinsafety-criticalapplications(suchaslifesupport)whereafailureoftheTIproductwouldreasonablybeexpectedtocauseseverepersonalinjuryordeath,unlessofficersofthepartieshaveexecutedanagreementspecificallygoverningsuchuse.Buyersrepresentthattheyhaveallnecessaryexpertiseinthesafetyandregulatoryramificationsoftheirapplications,and

acknowledgeandagreethattheyaresolelyresponsibleforalllegal,regulatoryandsafety-relatedrequirementsconcerningtheirproductsandanyuseofTIproductsinsuchsafety-criticalapplications,notwithstandinganyapplications-relatedinformationorsupportthatmaybeprovidedbyTI.Further,BuyersmustfullyindemnifyTIanditsrepresentativesagainstanydamagesarisingoutoftheuseofTIproductsinsuchsafety-criticalapplications.

TIproductsareneitherdesignednorintendedforuseinmilitary/aerospaceapplicationsorenvironmentsunlesstheTIproductsarespecificallydesignatedbyTIasmilitary-gradeor\"enhancedplastic.\"OnlyproductsdesignatedbyTIasmilitary-grademeetmilitary

specifications.BuyersacknowledgeandagreethatanysuchuseofTIproductswhichTIhasnotdesignatedasmilitary-gradeissolelyattheBuyer'srisk,andthattheyaresolelyresponsibleforcompliancewithalllegalandregulatoryrequirementsinconnectionwithsuchuse.TIproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificTIproductsaredesignatedbyTIascompliantwithISO/TS16949requirements.Buyersacknowledgeandagreethat,iftheyuseanynon-designatedproductsinautomotiveapplications,TIwillnotberesponsibleforanyfailuretomeetsuchrequirements.

FollowingareURLswhereyoucanobtaininformationonotherTexasInstrumentsproductsandapplicationsolutions:ProductsAmplifiers

DataConvertersDSP

ClocksandTimersInterfaceLogic

PowerMgmtMicrocontrollersRFID

RF/IFandZigBee®Solutions

amplifier.ti.comdataconverter.ti.comdsp.ti.comwww.ti.com/clocksinterface.ti.comlogic.ti.compower.ti.commicrocontroller.ti.comwww.ti-rfid.comwww.ti.com/lprfApplicationsAudio

AutomotiveBroadbandDigitalControlMedicalMilitary

OpticalNetworkingSecurityTelephony

Video&ImagingWireless

www.ti.com/audiowww.ti.com/automotivewww.ti.com/broadbandwww.ti.com/digitalcontrolwww.ti.com/medicalwww.ti.com/militarywww.ti.com/opticalnetworkwww.ti.com/securitywww.ti.com/telephonywww.ti.com/videowww.ti.com/wirelessMailingAddress:TexasInstruments,PostOfficeBox655303,Dallas,Texas75265

Copyright©2008,TexasInstrumentsIncorporated

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