MOS Dynamic memory cells and method of fabricating

专利名称：MOS Dynamic memory cells and method of

fabricating the same

发明人：Mitsugi Ogura申请号：US06/335601申请日：19811230公开号：US04492973A公开日：19850108

摘要：The MOS dynamic memory cell comprises a first electroconductive layerformed on a surface of a first region of a semiconductor substrate having a first

conductivity type and an impurity concentration of less than 5. times.10.sup.14 cm.sup.-3through a first insulating film, a second semiconductor region having a higher impurityconcentration than the first semiconductor region and provided adjacent to one end ofthe first semiconductor region, a second electroconductive layer formed on the secondsemiconductor region through a second insulating film, and a third semiconductor regionof a second conductivity type and provided adjacent to the second semiconductor region.The second electroconductive layer is used as a row line, whereas the third

semiconductor region is used as a column line as well as a digit line. An inversion layer isformed on a surface of the first semiconductor region. The MOS dynamic memory cell isused to fabricate a MOS dynamic random access memory.

申请人：TOKYO SHIBAURA DENKI KABUSHIKI KAISHA

代理机构：Oblon, Fisher, Spivak, McClelland & Maier

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